Effect of annealing temperature on persistent luminescence of Y3Al2Ga3O12:Cr3+ co-doped with Ce3+ and Pr3+

Y3(Al,Ga)5O12 (YAGG) materials doped with Ce3+, Cr3+ and Pr3+ were synthesized by using a modified Pechini method subsequently annealed in air at selected temperatures between 900 1500 °C. According to X-ray powder diffraction (XRPD) transmission electron microscopy (TEM) analyses, the particles size distributions become large broad, respectively, due sintering agglomeration high annealing temperatures. Based on infrared (FTIR) spectra calculation of multi-phonon de-excitation probabilities, energy O–H vibrations are not causing significant emitting 5d level Ce3+ if temperature is above The analysis photoluminescence excitation (PLE), (PL) persistent luminescence (PersL) as well decay curves revealed that both transfer efficiency intensity increase increasing charge carrier trapping-detrapping model was applied explain PersL mechanism YAGG studied.